Vertical field effect transistor including channel having GaN and AIGaN regions
AssigneeRobert Bosch GmbH
InventorJens Baringhaus
Life of this patent
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Abstract
A vertical field effect transistor. The vertical field effect transistor includes a trench structure having a first side and a second side opposite the first side. A field effect transistor (FET) channel is formed at the first side, and the second side is free of a FET channel. The FET channel includes a gallium nitride (GaN) region and an aluminum gallium nitride (AlGaN) region adjacent thereto. The GaN region includes a p-conductive first region and a second region formed thereon. The vertical field effect transistor also includes a source electrode that is electroconductively connected to the p-conductive first region of the GaN region and to the AlGaN region.
Claims13
A vertical field effect transistor, comprising:
- a trench structure having a first side and a second side opposite the first side, a field effect transistor (FET) channel including a gallium nitride (GaN) region and an aluminum gallium nitride (AlGaN) region adjacent to the GaN region, and the GaN region includes a p-conductive first region and a second region formed on the p-conductive first region;
- and
- a source electrode that is electroconductively connected to the p-conductive first region of the GaN region and to the AlGaN region.
A method for manufacturing a vertical field effect transistor, the method comprising the following steps:
- forming a trench structure on or above a gallium nitride (GaN) substrate, the trench structure having a first side and a second side opposite the first side, a field effect transistor (FET) channel including a GaN region and an aluminum gallium nitride (AlGaN) region adjacent to the GaN region, and the GaN region including a p-conductive first region and a second region formed on the p-conductive first region;
- and
- forming a source electrode that is electroconductively connected to the p-conductive first region of the GaN region and to the AlGaN region.
Dependencies are inferred from the claim text.