H10D 30/4755
Having wide bandgap charge-carrier supplying layers
Official title: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
H10D30/4755 (Having wide bandgap charge-carrier supplying layers) appears on 2,672 US grants and 3,133 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,672
- Published applications
- 3,133
- Assignees
- 464
- Inventors
- 2,863
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 9 | 0 |
| 1988 | 5 | 0 |
| 1989 | 12 | 0 |
| 1990 | 6 | 0 |
| 1991 | 9 | 0 |
| 1992 | 7 | 0 |
| 1993 | 7 | 0 |
| 1994 | 11 | 0 |
| 1995 | 11 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 0 | 0 |
| 1999 | 7 | 0 |
| 2000 | 5 | 0 |
| 2001 | 6 | 3 |
| 2002 | 3 | 6 |
| 2003 | 9 | 11 |
| 2004 | 8 | 20 |
| 2005 | 10 | 52 |
| 2006 | 21 | 80 |
| 2007 | 29 | 85 |
| 2008 | 43 | 93 |
| 2009 | 55 | 116 |
| 2010 | 79 | 104 |
| 2011 | 93 | 165 |
| 2012 | 99 | 182 |
| 2013 | 153 | 239 |
| 2014 | 202 | 270 |
| 2015 | 267 | 246 |
| 2016 | 258 | 207 |
| 2017 | 221 | 227 |
| 2018 | 182 | 179 |
| 2019 | 174 | 169 |
| 2020 | 159 | 153 |
| 2021 | 113 | 122 |
| 2022 | 87 | 112 |
| 2023 | 99 | 88 |
| 2024 | 94 | 102 |
| 2025 | 74 | 75 |
| 2026 | 28 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Charge balanced power transistors29 Sep 2026US 12,751,036 B2Virginia Tech Intellectual Properties, Inc.
- HEMT device and semiconductor device22 Sep 2026US 12,745,415 B2Hunan San'an Semiconductor Co., Ltd.
- Nitride semiconductor device and manufacturing method therefor22 Sep 2026US 12,745,437 B2Rohm Co., Ltd.
- HfS3 field-effect transistors with a two-dimensional hole gas8 Sep 2026US 12,733,196 B2Board of Regents of the University of Nebraska
- HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method1 Sep 2026US 12,727,185 B2STMicroelectronics S,r.l.
- Nitride semiconductor device1 Oct 2026US 2026/0304897 A1Panasonic Holdings Corporation
- Nitride semiconductor device27 Aug 2026US 2026/0255627 A1Panasonic Holdings Corporation
- Nitride semiconductor device27 Aug 2026US 2026/0255643 A1Panasonic Holdings Corporation
- Method for manufacturing semiconductor device13 Aug 2026US 2026/0239653 A1Sumitomo Electric Industries, Ltd.
- Method and system for vertical gan jfet with isolated back barrier13 Aug 2026US 2026/0239654 A1Alithia Power Inc.
Most cited
By later US patents
- Nitride based transistors on semi-insulating silicon carbide substrates334US 6,316,793 B1Cree, Inc. · 2001
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions298US 5,192,987 AAPA Optics, Inc. · 1993
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003
- Methods of fabricating nitride-based transistors with a cap layer and a recessed gate237US 7,238,560 B2Cree, Inc. · 2007