H10D 30/475
Having wider bandgap layer formed on top of lower bandgap active layer
Official title: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
H10D30/475 (Having wider bandgap layer formed on top of lower bandgap active layer) appears on 5,101 US grants and 6,859 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,101
- Published applications
- 6,859
- Assignees
- 737
- Inventors
- 5,368
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 6 | 0 |
| 1987 | 10 | 0 |
| 1988 | 8 | 0 |
| 1989 | 13 | 0 |
| 1990 | 7 | 0 |
| 1991 | 10 | 0 |
| 1992 | 8 | 0 |
| 1993 | 8 | 0 |
| 1994 | 13 | 0 |
| 1995 | 12 | 0 |
| 1996 | 3 | 0 |
| 1997 | 6 | 0 |
| 1998 | 0 | 0 |
| 1999 | 11 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 3 |
| 2002 | 5 | 9 |
| 2003 | 9 | 13 |
| 2004 | 10 | 29 |
| 2005 | 12 | 53 |
| 2006 | 25 | 92 |
| 2007 | 36 | 98 |
| 2008 | 45 | 117 |
| 2009 | 63 | 133 |
| 2010 | 95 | 149 |
| 2011 | 121 | 224 |
| 2012 | 130 | 247 |
| 2013 | 218 | 347 |
| 2014 | 301 | 414 |
| 2015 | 398 | 406 |
| 2016 | 375 | 368 |
| 2017 | 367 | 397 |
| 2018 | 311 | 305 |
| 2019 | 325 | 352 |
| 2020 | 340 | 412 |
| 2021 | 272 | 376 |
| 2022 | 273 | 490 |
| 2023 | 288 | 475 |
| 2024 | 361 | 556 |
| 2025 | 366 | 464 |
| 2026 | 221 | 330 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Nitride-based bidirectional switching device and method for manufacturing the same6 Oct 2026US 12,757,426 B2Innoscience (Suzhou) Semiconductor Co., Ltd.
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Composite substrate and manufacturing method therefor, and semiconductor device structure6 Oct 2026US 12,757,461 B2Enkris Semiconductor, Inc.
- Carrier structure for etch-back silicon-on-insulator process8 Oct 2026US 2026/0313929 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High electron mobility transistor and method for forming the same8 Oct 2026US 2026/0313930 A1United Microelectronics Corp.
- High-quality e-mode gan hemt power semiconductor epitaxial wafer using si(100) growth substrate8 Oct 2026US 2026/0313942 A1Wavelord Co., Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of making8 Oct 2026US 2026/0314015 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Nitride based transistors on semi-insulating silicon carbide substrates334US 6,316,793 B1Cree, Inc. · 2001
- FinFETs with strained well regions301US 9,601,342 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017