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US 6,316,793 B1Granted
Nitride based transistors on semi-insulating silicon carbide substrates
AssigneeCree, Inc.
InventorsScott Thomas Sheppard, Scott Thomas Allen, John Williams Palmour
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Abstract
A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.
Claims15
A high electron mobility transistor (HEMT) comprising:
- a semi-insulating silicon carbide substrate;
- an aluminum nitride buffer layer on said substrate;
- an insulating gallium nitride layer on said buffer layer;
- an active structure of aluminum gallium nitride on said gallium nitride layer that includes a first undoped aluminum gallium nitride layer on said gallium nitride insulating layer, a conductively doped aluminum gallium nitride layer on said undoped aluminum nitride layer, and a second undoped aluminum gallium nitride layer on said conductively doped aluminum nitride layer;
- a passivation layer on said second undoped aluminum gallium nitride layer of said aluminum gallium nitride active structure;
- and
- respective source, drain and gate contacts to said second undoped aluminum gallium nitride layer of said aluminum gallium nitride active structure.
4 more elements
Dependencies are inferred from the claim text.