HEMT device and semiconductor device

Abstract

Provided is a HEMT device, including: a substrate, an epitaxial layer, a source, a drain, a gate, a conductive layer, an electrocoupling structure, and a high-resistance structure. The epitaxial layer is disposed on the substrate, and includes: a first semiconductor stack layer and a second semiconductor layer disposed on the first semiconductor stack layer; wherein a two-dimensional electron gas is formed at an interface between the first semiconductor stack layer and the second semiconductor layer. The conductive layer is disposed within the epitaxial layer and between the substrate and the two-dimensional electron gas. An end of the electrocoupling structure is electrically connected to the gate, and the other end extends into the epitaxial layer and is electrically connected to the conductive layer. The high-resistance structure is at least partially disposed between the conductive layer and the two-dimensional electron gas, and between the electrocoupling structure and the two-dimensional electron gas.

Dependencies are inferred from the claim text.