HfS3 field-effect transistors with a two-dimensional hole gas
AssigneeBoard of Regents of the University of Nebraska
InventorsArchit Dhingra, Peter A. Dowben, Alexey Lipatov, Alexander Sinitskii
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Abstract
HfS3-based semiconductor devices that include a substrate layer, a substrate dielectric layer formed on the substrate layer, a bulk layer formed on the substrate dielectric layer, the bulk layer comprising as-synthesized n-type HfS3, and a p-type HfS3 layer formed on the bulk layer, wherein the p-type HfS3 comprises the two-dimensional hole gas (2DHG) layer. FET devices further include first and second electrodes located on the substrate dielectric layer and forming a semiconductor channel between the first and second electrodes.
Claims18
A HfS3-based semiconductor device, comprising:
- a substrate layer;
- a substrate dielectric layer formed on the substrate layer;
- a bulk layer formed on the substrate dielectric layer, the bulk layer comprising n-type HfS3;
- and
- a p-type HfS3 layer formed on the bulk layer, wherein the p-type HfS3 layer comprises a two-dimensional hole gas (2DHG) layer.
A HfS3-based field effect transistor (FET) device, comprising:
- a Si substrate layer;
- a SiO2 substrate dielectric layer formed on the Si substrate layer;
- a bulk layer formed on the SiO2 substrate dielectric layer, the bulk layer comprising n-type HfS3;
- a p-type HfS3 layer formed on the bulk layer, wherein the p-type HfS3 layer comprises a two-dimensional hole gas (2DHG) layer;
- and
- first and second Au electrodes located on the SiO2 substrate dielectric layer and forming a semiconductor channel between the first and second electrodes.
Dependencies are inferred from the claim text.