Nitride semiconductor device

A nitride semiconductor device comprising:

• a substrate;
• a first nitride semiconductor layer disposed above the substrate;
• a second nitride semiconductor layer disposed above the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than a band gap of the first nitride semiconductor layer;
• a third nitride semiconductor layer of p-type disposed above the second nitride semiconductor layer;
• a first electrode disposed above the third nitride semiconductor layer;
• a second electrode disposed above the substrate and electrically connected to the first nitride semiconductor layer;
• and
• an intermediate layer disposed between the second nitride semiconductor layer and the third nitride semiconductor layer,
• wherein the third nitride semiconductor layer includes:
• an overlapping portion that overlaps the intermediate layer in plan view of the substrate;
• and
• a non-overlapping portion that does not overlap the intermediate layer in plan view of the substrate,
• a shortest distance between the non-overlapping portion and the second electrode is shorter than a shortest distance between the overlapping portion and the second electrode, and
• the first electrode is electrically connected to the non-overlapping portion.