H10D 12/021
Of gated diodes
Official title: {of gated diodes, e.g. field-controlled diodes [FCD]}
H10D12/021 (Of gated diodes) appears on 432 US grants and 460 published applications in this corpus.
Search patents in H10D- Granted patents
- 432
- Published applications
- 460
- Assignees
- 124
- Inventors
- 689
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 3 | 0 |
| 2003 | 1 | 4 |
| 2004 | 2 | 0 |
| 2005 | 3 | 1 |
| 2006 | 1 | 0 |
| 2007 | 1 | 3 |
| 2008 | 0 | 3 |
| 2009 | 0 | 10 |
| 2010 | 8 | 17 |
| 2011 | 10 | 10 |
| 2012 | 10 | 17 |
| 2013 | 17 | 24 |
| 2014 | 29 | 35 |
| 2015 | 30 | 31 |
| 2016 | 30 | 42 |
| 2017 | 42 | 37 |
| 2018 | 35 | 36 |
| 2019 | 41 | 43 |
| 2020 | 43 | 50 |
| 2021 | 22 | 22 |
| 2022 | 27 | 16 |
| 2023 | 18 | 16 |
| 2024 | 20 | 17 |
| 2025 | 8 | 15 |
| 2026 | 9 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and method of manufacturing the same28 Jul 2026US 12,696,518 B2Mitsubishi Electric Corporation
- Fin field-effect transistor device with hybrid conduction mechanism31 Mar 2026US 12,593,476 B2Fudan University
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- Trench power semiconductor device16 Jul 2026US 2026/0206298 A1Excelliance MOS Corporation
- Semiconductor memory device2 Jul 2026US 2026/0190399 A1Samsung Electronics Co., Ltd.
- Horizontal transport gaa tunnel fets18 Jun 2026US 2026/0173436 A1International Business Machines Corporation
- Tunnel current driven element11 Jun 2026US 2026/0164686 A1National Institute of Advanced Industrial Science and Technology
- 2d metal selenide-silicon steep sub-threshold heterojunction triodes with high on-current density11 Jun 2026US 2026/0164698 A1The Trustees of the University of Pennsylvania
Most cited
By later US patents
- Semiconductor device and method of manufacturing thereof134US 6,501,146 B1Mitsubishi Denki Kabushiki Kaisha · 2002
- Tunneling effect transistor with self-aligned gate119US 7,700,466 B2International Business Machines Corporation · 2010
- Method of fabricating power rectifier device63US 6,420,225 B1APD Semiconductor, Inc. · 2002
- Method of forming a truck MOS gate or a power semiconductor device55US 5,783,491 AMitsubishi Denki Kabushiki Kaisha · 1998
- Vertical field-effect semiconductor device with buried gate region40US 6,600,192 B1The Kansai Electric Power Co., Inc. · 2003