Tunnel current driven element

A tunneling current driven element, comprising:

• a first conductivity type semiconductor layer formed of an indirect transition semiconductor material, the first conductivity type semiconductor layer having a first conductivity type which is a conductivity type of at least one selected from the group consisting of a “p” type and an “n” type and having an impurity concentration of 3×1019 cm−3 or more;
• a second conductivity type semiconductor layer formed of the indirect transition semiconductor material, the second conductivity type semiconductor layer having a second conductivity type which is a conductivity type different from the first conductivity type;
• and
• an intermediate layer arranged so as to be sandwiched between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the intermediate layer being formed of at least one selected from the group consisting of an intrinsic semiconductor and an impurity-containing semiconductor having an impurity concentration lower than impurity concentrations of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
• wherein the intermediate layer is a layer having a laminate structure in which, assuming a first direction directed from the first conductivity type semiconductor layer toward the second conductivity type semiconductor layer as a laminating direction, on the first conductivity type semiconductor layer serving as a base layer, at least one first base material layer and at least one quantum well layer are alternately laminated in the stated order, and a second base material layer is laminated on the at least one quantum well layer on a side closest to the second conductivity type semiconductor layer,
• wherein the at least one first base material layer is a layer that is formed of a first semiconductor material selected from the indirect transition semiconductor material and has a thickness in the first direction of from 0.5 nm to 20 nm,
• wherein the second base material layer is a layer that is formed of a second semiconductor material selected from the indirect transition semiconductor material and has a thickness in the first direction of from 10 nm to 500 nm, and
• wherein the at least one quantum well layer is a layer that is formed of a third semiconductor material selected from the indirect transition semiconductor material of a type different from the first semiconductor material and the second semiconductor material and has a thickness in the first direction of from 0.5 nm to 10 nm, the third semiconductor material being selected from the indirect transition semiconductor material having a band structure of at least one selected from the group consisting of a first band structure and a second band structure, the first band structure having a valence band edge present at an energy position higher than valence band edges of the first semiconductor material and the second semiconductor material, the second band structure having a conduction band edge present at an energy position lower than conduction band edges of the first semiconductor material and the second semiconductor material.