Semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyuncheol Kim, Yongseok Kim, Dongsoo Woo, Kyunghwan Lee, Minjun Lee
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Abstract
A semiconductor memory device may include a substrate, first and second impurity regions on the substrate, first and second gate insulating layers sequentially stacked on the substrate and extended in a direction between the first and second impurity regions, and a gate electrode on the second gate insulating layer. The first and second impurity regions may have different conductivity types from each other, a bottom surface of the first gate insulating layer may be in direct contact with a top surface of the substrate, and the second gate insulating layer may include a ferroelectric material.
Claims9
A semiconductor memory device, comprising:
- a substrate;
- a stack structure including interlayer dielectric layers and gate electrodes, which are alternately and repeatedly stacked on the substrate;
- and
- vertical channel structures, which are provided in vertical channel holes penetrating the stack structure and are in contact with the substrate, wherein:
- each of the vertical channel structures includes:
- a ferroelectric pattern formed of a ferroelectric material, the ferroelectric pattern covering an inner side surface of a corresponding vertical channel hole of the vertical channel holes;
- a vertical semiconductor pattern, which covers the ferroelectric pattern and is connected to the substrate;
- a charge trap pattern interposed between the ferroelectric pattern and the vertical semiconductor pattern;
- and
- a conductive pad provided on the vertical semiconductor pattern,
- the substrate and the conductive pad have different conductivity types from each other,
- the ferroelectric pattern and the charge trap pattern vertically extend between the substrate and the conductive pad, and
- an inner side surface of the charge trap pattern is in direct contact with an outer side surface of the vertical semiconductor pattern.
Dependencies are inferred from the claim text.