Semiconductor device and method of manufacturing the same

A semiconductor device including an IGBT region having an IGBT therein and a diode region having a diode therein, the semiconductor device comprising:

• a semiconductor substrate having first and second main surfaces;
• a drift layer of a first conductivity type provided in the semiconductor substrate;
• a base layer of a second conductivity type provided in the semiconductor substrate and selectively disposed on a first main surface side with respect to the drift layer;
• an anode layer of the second conductivity type provided in the semiconductor substrate and selectively disposed on the first main surface side with respect to the drift layer;
• and
• an emitter electrode provided on the first main surface of the semiconductor substrate, wherein
• the drift layer and the emitter electrode are shared between the IGBT region and the diode region, the base layer is used in the IGBT region, the anode layer is used in the diode region,
• the semiconductor device further comprising:
• an active trench provided in a region that penetrates the base layer from the first main surface side and reaches a part of the drift layer;
• a diode trench provided in a region that penetrates the anode layer from the first main surface side and reaches a part of the drift layer;
• a capacitance adjustment trench provided from the first main surface side to at least a part of the anode layer;
• and
• a crossing trench provided in a region that penetrates the base layer or the anode layer from the first main surface side and reaches a part of the drift layer, wherein
• the crossing trench is shared between the IGBT region and the diode region, the active trench is used in the IGBT region, the diode trench and the capacitance adjustment trench are used in the diode region,
• the capacitance adjustment trench is provided only between the active trench and the diode trench,
• a gate electrode is embedded in the active trench via a gate insulating film,
• a diode electrode is embedded in the diode trench via a diode insulating film,
• a capacitance adjustment electrode is embedded in the capacitance adjustment trench via a capacitance adjustment insulating film,
• an electrode for the crossing trench is embedded in the crossing trench via an insulating film for the crossing trench,
• the diode electrode is electrically connected to the emitter electrode, and
• the crossing trench is provided from the capacitance adjustment trench to the active trench in a plan view;
• and the gate electrode and the capacitance adjustment electrode are electrically connected via the electrode for the crossing trench.