Fin field-effect transistor device with hybrid conduction mechanism

A fin field-effect transistor device with hybrid conduction mechanism, including:

• a fin field-effect transistor, which includes a substrate, a fin channel region, a first source region and a first drain region;
• the first source region and the first drain region are arranged along a first direction above the substrate;
• the fin channel region is formed on the substrate between the first source region and the first drain region;
• wherein, the first source region and the first drain region are doped with first ions;
• wherein, the first direction represents the channel direction of the fin field-effect transistor;
• a second source region and a second drain region, the second source region is formed between the substrate and the first source region, the second drain region is formed between the substrate and the first drain region;
• the height of the second source region and the height of the second drain region are not lower than the height of the substrate between the first source region and the first drain region;
• wherein, the second drain region is doped with the first ions, the second source region is doped with second ions, and the type of the first ions is different from the type of the second ions.