2d metal selenide-silicon steep sub-threshold heterojunction triodes with high on-current density

Abstract

A tunnelling field-effect transistor, comprising: an active portion comprising one or more layers of a 2-D crystalline material; a semiconducting substrate, the active portion being superposed over the semiconducting substrate, and the semiconducting substrate being 3-D crystalline in nature; a source electrode in electronic communication with the active portion; a drain electrode in electronic communication with the active portion; and a gate electrode. Methods, comprising operating a transistor according to the present disclosure. Devices, a device comprising a transistor according to the present disclosure, the device optionally being characterized as a logic device. Methods, the methods comprising fabricating a transistor according to the present disclosure.

Dependencies are inferred from the claim text.