H10D 10/881
Resonant tunnelling transistors
Official title: {Resonant tunnelling transistors}
H10D10/881 (Resonant tunnelling transistors) appears on 68 US grants and 24 published applications in this corpus.
Search patents in H10D- Granted patents
- 68
- Published applications
- 24
- Assignees
- 38
- Inventors
- 121
- Latest grant
- 27 Sep 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 6 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
| 2004 | 1 | 0 |
| 2005 | 1 | 2 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 2 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 2 |
| 2012 | 1 | 3 |
| 2013 | 0 | 0 |
| 2014 | 3 | 1 |
| 2015 | 4 | 5 |
| 2016 | 2 | 1 |
| 2017 | 2 | 0 |
| 2018 | 0 | 4 |
| 2019 | 4 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 2 | 0 |
| 2023 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices27 Sep 2022US 11,456,374 B2
- Two-channel semiconductor component18 Jan 2022US 11,227,954 B2Brandenburgische Technische Universität Cottbus-Senftenberg
- Semiconductor device including resonant tunneling diode structure having a superlattice22 Oct 2019US 10,453,945 B2Atomera Incorporated
- Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice2 Apr 2019US 10,249,745 B2Atomera Incorporated
- Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers1 Jan 2019US 10,170,603 B2Atomera Incorporated
- Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices2 Feb 2023US 2023/0031642 A1
- Two-channel semiconductor component11 Feb 2021US 2021/0043775 A1Brandenburgische Technische Universität Cottbus-Senftenberg
- Method of Manufacture of Germanium-Silicon-Tin Heterojunction Bipolar Transistor Devices26 Sep 2019US 2019/0296131 A1
- Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers8 Feb 2018US 2018/0040714 A1Atomera Incorporated
- Semiconductor device including resonant tunneling diode structure having a superlattice8 Feb 2018US 2018/0040724 A1Atomera Incorporated
Most cited
By later US patents
- Method of making a superlattice heterojunction bipolar device179US 4,937,204 ASony Corporation · 1990
- Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures92US 7,875,958 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2011
- Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers66US 10,170,603 B2Atomera Incorporated · 2019
- Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers65US 10,170,604 B2Atomera Incorporated · 2019
- Integration of lateral and vertical quantum well transistors in the same epitaxial stack63US 5,179,037 ATexas Instruments Incorporated · 1993