H10D 10/821
Vertical heterojunction bjts
Official title: {Vertical heterojunction BJTs}
H10D10/821 (Vertical heterojunction bjts) appears on 1,926 US grants and 1,661 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,926
- Published applications
- 1,661
- Assignees
- 412
- Inventors
- 2,370
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 4 | 0 |
| 1987 | 11 | 0 |
| 1988 | 8 | 0 |
| 1989 | 21 | 0 |
| 1990 | 22 | 0 |
| 1991 | 23 | 0 |
| 1992 | 33 | 0 |
| 1993 | 26 | 0 |
| 1994 | 47 | 0 |
| 1995 | 40 | 0 |
| 1996 | 34 | 0 |
| 1997 | 41 | 0 |
| 1998 | 40 | 0 |
| 1999 | 29 | 0 |
| 2000 | 29 | 0 |
| 2001 | 23 | 19 |
| 2002 | 49 | 71 |
| 2003 | 65 | 83 |
| 2004 | 96 | 94 |
| 2005 | 68 | 99 |
| 2006 | 74 | 85 |
| 2007 | 54 | 84 |
| 2008 | 52 | 76 |
| 2009 | 53 | 43 |
| 2010 | 63 | 34 |
| 2011 | 43 | 39 |
| 2012 | 34 | 48 |
| 2013 | 49 | 66 |
| 2014 | 70 | 58 |
| 2015 | 82 | 84 |
| 2016 | 64 | 69 |
| 2017 | 65 | 45 |
| 2018 | 65 | 72 |
| 2019 | 69 | 79 |
| 2020 | 68 | 82 |
| 2021 | 72 | 83 |
| 2022 | 65 | 64 |
| 2023 | 63 | 54 |
| 2024 | 58 | 44 |
| 2025 | 28 | 51 |
| 2026 | 13 | 35 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profile21 Jul 2026US 12,690,206 B2GLOBALFOUNDRIES U. S. Inc.
- Bipolar transistors14 Jul 2026US 12,684,790 B2GLOBALFOUNDRIES U. S. Inc.
- Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growth30 Jun 2026US 12,672,296 B2Texas Instruments Incorporated
- Heater elements23 Jun 2026US 12,666,961 B2GLOBALFOUNDRIES U. S. Inc.
- Method for producing a semiconductor chip2 Jun 2026US 12,648,165 B2Imec Vzw
- Heterojunction bipolar transistor8 Oct 2026US 2026/0314408 A1GLOBALFOUNDRIES U. S. Inc.
- Iii-v heterojunction bipolar transistor and its manufacturing method1 Oct 2026US 2026/0304809 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Electro-absorption modulator and monolithic electro-photonic integrated circuit comprising an electro-absorption modulator and driver electronics24 Sep 2026US 2026/0287940 A1ElectroPhotonic-IC Inc.
- Structure with spacer adjacent collector and related methods24 Sep 2026US 2026/0293231 A1GLOBALFOUNDRIES U. S. Inc.
- Metal-semiconductor field-effect transistors for gallium arsenide technologies20 Aug 2026US 2026/0247691 A1Skyworks Solutions, Inc.
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Process for making a buried conductor by fusing two wafers291US 4,704,785 ATexas Instruments Incorporated · 1987
- Low resistance power MOSFET or other device containing silicon-germanium layer203US 6,239,463 B1Siliconix Incorporated · 2001
- Vertical field effect transistor and diode197US 6,097,046 ATexas Instruments Incorporated · 2000