H10D 10/891
Comprising lattice-mismatched active layers
Official title: {comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors}
H10D10/891 (Comprising lattice-mismatched active layers) appears on 647 US grants and 593 published applications in this corpus.
Search patents in H10D- Granted patents
- 647
- Published applications
- 593
- Assignees
- 158
- Inventors
- 886
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 6 | 0 |
| 1994 | 11 | 0 |
| 1995 | 7 | 0 |
| 1996 | 9 | 0 |
| 1997 | 6 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 4 | 0 |
| 2001 | 10 | 8 |
| 2002 | 22 | 37 |
| 2003 | 37 | 38 |
| 2004 | 43 | 42 |
| 2005 | 32 | 46 |
| 2006 | 39 | 35 |
| 2007 | 26 | 46 |
| 2008 | 25 | 40 |
| 2009 | 25 | 23 |
| 2010 | 32 | 12 |
| 2011 | 23 | 17 |
| 2012 | 18 | 21 |
| 2013 | 24 | 22 |
| 2014 | 31 | 26 |
| 2015 | 27 | 31 |
| 2016 | 23 | 19 |
| 2017 | 24 | 18 |
| 2018 | 18 | 12 |
| 2019 | 20 | 18 |
| 2020 | 15 | 16 |
| 2021 | 17 | 26 |
| 2022 | 19 | 8 |
| 2023 | 9 | 5 |
| 2024 | 7 | 9 |
| 2025 | 6 | 11 |
| 2026 | 2 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Process for making a buried conductor by fusing two wafers291US 4,704,785 ATexas Instruments Incorporated · 1987
- Low resistance power MOSFET or other device containing silicon-germanium layer203US 6,239,463 B1Siliconix Incorporated · 2001
- Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)157US 6,531,369 B1Applied Micro Circuits Corporation · 2003
- RF circuits including transistors having strained material layers131US 7,709,828 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2010