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US 12,342,555 B1Granted
Bipolar transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsUppili Srinivasan Raghunathan, Steven M. Shank, Sarah Ann McTaggart, Megan Elizabeth Lydon-Nuhfer, Cameron Ezera Luce, Ramsey Hazbun, Alexander M. Derrickson
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region; an extrinsic base comprising an emitter opening with an angled sidewall; an emitter within the emitter opening; and an intrinsic base between the emitter and the collector.
Claims17
A structure comprising:
- a collector region;
- an extrinsic base comprising an emitter opening with an angled sidewall;
- an emitter within the emitter opening;
- and
- an intrinsic base between the emitter and the collector,
- wherein the extrinsic base comprises a single crystalline semiconductor material and the angled sidewall extends along an angled crystal plane facet of the single crystalline semiconductor material of the extrinsic base.
3 more elements
A structure comprising:
- a collector region;
- an extrinsic base comprising an emitter opening with an angled sidewall;
- an emitter within the emitter opening;
- and
- an intrinsic base between the emitter and the collector,
- wherein the extrinsic base comprises a single crystalline semiconductor material and the emitter is within the emitter opening extending into the extrinsic base, with the emitter opening comprising the angled sidewall and a vertical sidewall above the angled sidewall.
3 more elements
A structure comprises:
- a collector region;
- an intrinsic base region above the collector region;
- an extrinsic base above the intrinsic base region, the extrinsic base comprising an emitter opening with a vertical sidewall and an angled sidewall;
- an emitter within the emitter opening;
- and
- insulator material on the angled sidewall which isolates the extrinsic base from the emitter,
- wherein the extrinsic base comprises a single crystalline semiconductor material and the angled sidewall extends along an angled crystal plane facet of the single crystalline semiconductor material.
4 more elements
A structure comprises:
- a collector region;
- an intrinsic base region above the collector region;
- an extrinsic base above the intrinsic base region, the extrinsic base comprising an emitter opening with a vertical sidewall and an angled sidewall;
- an emitter within the emitter opening;
- and
- insulator material on the angled sidewall which isolates the extrinsic base from the emitter,
- wherein the vertical sidewall comprises a sidewall spacer material and the angled sidewall is covered with the insulator material and the sidewall spacer material comprises oxide material and nitride material over the oxide material, the oxide material extending to underneath the nitride material.
4 more elements
A structure comprises:
- a collector region;
- an intrinsic base region above the collector region;
- an extrinsic base above the intrinsic base region, the extrinsic base comprising an emitter opening with a vertical sidewall and an angled sidewall;
- an emitter within the emitter opening;
- and
- insulator material on the angled sidewall which isolates the extrinsic base from the emitter,
- wherein the vertical sidewall comprises a sidewall spacer material and the angled sidewall is covered with the insulator material and the sidewall spacer material is symmetrical within the emitter opening.
4 more elements
A structure comprises:
- a collector region;
- an intrinsic base region above the collector region;
- an extrinsic base above the intrinsic base region, the extrinsic base comprising an emitter opening with a vertical sidewall and an angled sidewall;
- an emitter within the emitter opening;
- and
- insulator material on the angled sidewall which isolates the extrinsic base from the emitter,
- wherein the vertical sidewall comprises a sidewall spacer material and the angled sidewall is covered with the insulator material and the sidewall emitter extends over an upper surface of the sidewall spacer material.
4 more elements
A method comprising:
- forming a collector region;
- forming an extrinsic base with an emitter opening comprising an angled sidewall;
- forming an emitter within the emitter opening;
- and
- forming an intrinsic base between the emitter and the collector,
- wherein the extrinsic base comprises a single crystalline semiconductor material and the angled sidewall extends along an angled crystal plane facet of the single crystalline semiconductor material of the extrinsic base.
3 more elements
Dependencies are inferred from the claim text.