H10D 10/861
Having an emitter region comprising one or more non-monocrystalline elements of group
Official title: {having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon}
H10D10/861 (Having an emitter region comprising one or more non-monocrystalline elements of group) appears on 146 US grants and 130 published applications in this corpus.
Search patents in H10D- Granted patents
- 146
- Published applications
- 130
- Assignees
- 61
- Inventors
- 222
- Latest grant
- 16 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 2 |
| 2003 | 3 | 6 |
| 2004 | 4 | 3 |
| 2005 | 3 | 5 |
| 2006 | 3 | 2 |
| 2007 | 2 | 2 |
| 2008 | 2 | 0 |
| 2009 | 1 | 0 |
| 2010 | 1 | 3 |
| 2011 | 1 | 1 |
| 2012 | 4 | 3 |
| 2013 | 2 | 6 |
| 2014 | 3 | 3 |
| 2015 | 13 | 12 |
| 2016 | 9 | 8 |
| 2017 | 4 | 3 |
| 2018 | 5 | 8 |
| 2019 | 3 | 3 |
| 2020 | 5 | 13 |
| 2021 | 9 | 13 |
| 2022 | 17 | 6 |
| 2023 | 5 | 14 |
| 2024 | 11 | 7 |
| 2025 | 7 | 6 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for forming a transistor with a conductivity doped base structure16 Dec 2025US 12,501,634 B2NXP USA, Inc.
- Doped polar layers and semiconductor device incorporating same16 Dec 2025US 12,501,656 B2Kepler Computing Inc.
- Semiconductor device with lateral base link region28 Oct 2025US 12,457,784 B2NXP B. V.
- Doped polar layers and semiconductor device incorporating same22 Jul 2025US 12,369,351 B2Kepler Computing Inc.
- Amorphous metal thin film transistors17 Jun 2025US 12,336,205 B2Amorphyx, Incorporated
- Bipolar transistors25 Jun 2026US 2026/0181926 A1GLOBALFOUNDRIES U. S. Inc.
- Amorphous metal thin film transistors25 Dec 2025US 2025/0393225 A1Amorphyx, Incorporated
- Impure indium phosphide semiconductor substrate30 Oct 2025US 2025/0338525 A1QUALCOMM Incorporated
- Doped polar layers and semiconductor device incorporating same30 Oct 2025US 2025/0338552 A1Kepler Computing Inc.
- Discontinuous barrier film between emitter and base of bipolar transistor21 Aug 2025US 2025/0267911 A1Globalfoundries Singapore Pte. Ltd.
Most cited
By later US patents
- Doped polar layers and semiconductor device incorporating same64US 11,164,976 B2Kepler Computing Inc. · 2021
- Bipolar inversion channel device41US 4,800,415 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1989
- Semiconductor device having a hetero junction34US 4,062,034 ASony Corporation · 1977
- Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit34US 5,270,224 AFujitsu Limited · 1993
- Systems and methods for bidirectional device fabrication25US 9,355,853 B2Ideal Power Inc. · 2016