Semiconductor device having a hetero junction
AssigneeSony Corporation
InventorsTakeshi Matsushita, Hisao Hayashi, Mitsuru Shibasaki
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Abstract
A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.
Claims9
A semiconductor device comprising a semiconductor region of a predetermined conductivity type, a polycrystalline or amorphous silicon layer containing oxygen and of a predetermined conductivity type on said region and forming a hetero junction therewith, and means for supplying an electrical current through said junction.
A semiconductor device comprising:
- a substrate of a first conductivity type;
- a first region of a second conductivity type formed in said substrate on a major surface thereof;
- a first polycrystalline or amorphous silicon layer containing oxygen and of said first conductivity type formed on selected regions of said first region;
- and
- electrodes formed on said substrate, said region and layer.
A semiconductor device comprising a substrate of a first conductivity type, a first polycrystalline or amorphous silicon layer containing oxygen and of a second conductivity type formed on said substrate, a second polycrystalline or amorphous silicon layer containing oxygen and of the first conductivity type formed on said first layer, and electrodes formed on said substrate, said first and second layers.
Dependencies are inferred from the claim text.