H10D 10/841
Having a two-dimensional base
Official title: {having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base}
H10D10/841 (Having a two-dimensional base) appears on 36 US grants and 23 published applications in this corpus.
Search patents in H10D- Granted patents
- 36
- Published applications
- 23
- Assignees
- 30
- Inventors
- 81
- Latest grant
- 29 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 2 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 2 | 1 |
| 2009 | 1 | 1 |
| 2010 | 0 | 1 |
| 2011 | 2 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 1 |
| 2018 | 1 | 1 |
| 2019 | 1 | 4 |
| 2020 | 2 | 4 |
| 2021 | 4 | 1 |
| 2022 | 2 | 1 |
| 2023 | 1 | 2 |
| 2024 | 0 | 0 |
| 2025 | 1 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Integrated circuit comprising at least one bipolar transistor and a corresponding method of production29 Apr 2025US 12,289,884 B2STMicroelectronics (Rousset) SAS
- Heterojunction bipolar transistor with emitter base junction oxide interface19 Dec 2023US 11,848,192 B2GLOBALFOUNDRIES U. S. Inc.
- Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices27 Sep 2022US 11,456,374 B2
- Solar cell with reduced surface recombination1 Feb 2022US 11,239,378 B2International Business Machines Corporation
- High performance super-beta NPN (SBNPN)21 Dec 2021US 11,205,718 B1Texas Instruments Incorporated
- Impure indium phosphide semiconductor substrate30 Oct 2025US 2025/0338525 A1QUALCOMM Incorporated
- Semiconductor device and radio frequency power amplifier26 Jun 2025US 2025/0212432 A1Murata Manufacturing Co., Ltd.
- Semiconductor Device and Method of Manufacturing the Same29 Jun 2023US 2023/0207661 A1Nippon Telegraph and Telephone Corporation
- Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices2 Feb 2023US 2023/0031642 A1
- Integrated circuit comprising at least one bipolar transistor and a corresponding method of production24 Nov 2022US 2022/0375954 A1STMicroelectronics (Rousset) SAS
Most cited
By later US patents
- Transistor provided with strained germanium layer124US 5,241,197 AHitachi, Ltd. · 1993
- Bipolar inversion channel device41US 4,800,415 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1989
- Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal36US 7,332,752 B2Opel, Inc. · 2008
- Semiconductor device33US 5,567,961 AHitachi, Ltd. · 1996
- Transistor16US 4,825,265 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1989