Heterojunction bipolar transistor with emitter base junction oxide interface
AssigneeGlobalFoundries U.S. Inc.
InventorsVibhor Jain, Anthony K. Stamper, Steven M. Shank, John J. Pekarik
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor having an emitter base junction with a silicon-oxygen lattice interface and methods of manufacture. The device includes: a collector region buried in a substrate; shallow trench isolation regions, which isolate the collector region buried in the substrate; a base region on the substrate and over the collector region; an emitter region composed of a single crystalline of semiconductor material and located over with the base region; and an oxide interface at a junction of the emitter region and the base region.
Claims14
A device comprising:
- a collector region comprising a doped region in a semiconductor substrate;
- a base region over the collector region;
- an emitter region comprising a single crystalline semiconductor material located over the base region;
- and
- an oxide interface comprising a super-lattice of silicon and oxygen at a junction of the emitter region and the base region.
A device comprising:
- a collector region comprising a doped region in a semiconductor substrate;
- a base region over the collector region;
- an emitter region comprising a single crystalline semiconductor material located over the base region;
- and
- an oxide interface comprising a sub-monolayer oxide or super-lattice of oxygen at a junction of the emitter region and the base region,
- a second oxide interface within the emitter region, above the oxide interface,
- wherein the emitter region is a doped semiconductor material having a first concentration between the oxide interface and the second oxide interface, and a second concentration at a top portion thereof, and
- wherein the second oxide interface is a sub-monolayer oxide or super-lattice of oxygen.
A bipolar device, comprising:
- a collector region comprising a doped region in a semiconductor substrate;
- a base over the collector region;
- a single crystal semiconductor emitter over the base;
- and
- an oxide at a junction comprising a sub-monolayer oxide or super-lattice of oxygen between the base and the emitter,
- wherein the sub-monolayer oxide is provided at an emitter base junction and within the single crystal semiconductor emitter.
A device comprising:
- a collector region comprising a doped region in a semiconductor substrate;
- a base region over the collector region;
- an emitter region located over the base region;
- insulator material on sides of the emitter region;
- and
- an oxide interface comprises a super-lattice of silicon and oxygen at an interface of the emitter region and the base region.
Dependencies are inferred from the claim text.