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US 5,567,961 AGranted
Semiconductor device
AssigneeHitachi, Ltd.
InventorsToshiyuki Usagawa, Atsushi Takai, Hiroyuki Itoh
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a double hetero junction bipolar transistor and a field-effect transistor. The base of the bipolar transistor and the gate of the field-effect transistor are connected to each other to serve as an input terminal and the collector of the bipolar transistor and the drain of the field-effect transistor are connected to each other to serve as an output terminal. The bipolar transistor and the field-effect transistor may be created on a common substrate. In this case, both the bipolar and field-effect transistors can have the same multilayer/film structures.
Claims40
A semiconductor device comprising:
- a bipolar transistor including an emitter, a base and a collector, wherein hetero junctions are each created between said emitter and said base of said bipolar transistor and between said base and said collector of said bipolar transistor;
- and
- a field-effect transistor having a polarity different from a polarity of said bipolar transistor, said field-effect transistor including a gate, a source and a drain;
- wherein said base of said bipolar transistor and said gate of said field-effect transistor are connected to each other to serve as an input terminal,
- wherein said collector of said bipolar transistor and said drain of said field-effect transistor are connected to each other to serve as an output terminal, and
- wherein said emitter of said bipolar transistor is connected to a first power supply and said source of said field-effect transistor is connected to a second power supply.
3 more elements
A semiconductor device comprising:
- a bipolar transistor including an emitter, a base and a collector, wherein hereto junctions are each created between said emitter and said base of said bipolar transistor and between said base and said collector of said bipolar transistor;
- and
- a field-effect transistor having a polarity different from a polarity of said bipolar transistor, said field-effect transistor including a gate, a source and a drain;
- wherein said base of said bipolar transistor and said gate of said field-effect transistor are connected to each other to serve as an input terminal,
- wherein said collector of said bipolar transistor and said drain of said field-effect transistor are connected to each other to serve as an output terminal,
- wherein said emitter of said bipolar transistor is connected to a first power supply and said source of said field-effect transistor is connected to a second power supply,
- wherein said bipolar transistor and said field-effect transistor are created on a common substrate, are separated from each other and have the same multilayer/film structures,
- wherein active layers of said bipolar transistor and said field-effect transistor are each created from the same compound semiconductor layer, and
- wherein a constant-current limiter is inserted between said base of said bipolar transistor and said input terminal.
6 more elements
A semiconductor device comprising:
- a bipolar transistor including an emitter, a base and a collector, wherein hetero junctions are each created between said emitter and said base of said bipolar transistor and between said base and said collector of said bipolar transistor;
- and
- a field-effect transistor having a polarity different from a polarity of said bipolar transistor, said field-effect transistor including a gate, a source and a drain;
- wherein said base of said bipolar transistor and said gate of said field-effect transistor are connected to each other to serve as an input terminal,
- wherein said collector of said bipolar transistor and said drain of said field-effect transistor are connected to each other to serve as an output terminal,
- wherein said emitter of said bipolar transistor is connected to a first power supply and said source of said field-effect transistor is connected to a second power supply,
- wherein said bipolar transistor and said field-effect transistor are created on a common substrate, are separated from each other and have the same multilayer/film structures,
- wherein active layers of said bipolar transistor and said field-effect transistor are each created from the same compound semiconductor layer, and
- wherein a diode is inserted between said gate of said field-effect transistor and said input terminal.
6 more elements
A semiconductor device comprising:
- a bipolar transistor including an emitter, a base and a collector, wherein hereto junction are each created between said emitter and said base of said bipolar transistor and between said base and said collector of said bipolar transistor;
- and
- a field-effect transistor having a polarity different from a polarity of said bipolar transistor, said field-effect transistor including a gate, a source and a drain;
- wherein said base of said bipolar transistor and said gate of said field-effect transistor are connected to each other to serve as an input terminal,
- wherein said collector of said bipolar transistor and said drain of said field-effect transistor are connected to each other to serve as an output terminal,
- wherein said emitter of said bipolar transistor is connected to a first power supply and said source of said field-effect transistor is connected to a second power supply, and
- wherein a diode is inserted between said collector of said bipolar transistor and said output terminal.
4 more elements
A semiconductor device comprising:
- a bipolar transistor including an emitter a base and a collector, wherein hetero junctions are each created between said emitter and said base of said bipolar transistor and between said base and said collector of said bipolar transistor;
- and
- a field-effect transistor having a polarity different from a polarity of said bipolar transistor, said field-effect transistor including a gate, a source and a drain;
- wherein said base of said bipolar transistor and said gate of said field-effect transistor are connected to each other to serve as an input terminal;
- wherein said collector of said bipolar transistor and said drain of said field-effect transistor are connected to each other to serve as an output terminal,
- wherein said emitter of said bipolar transistor is connected to a first power supply and said source of said field-effect transistor is connected to a second power supply, and
- wherein a diode is inserted between said gate of said field-effect transistor and said input terminal.
4 more elements
Dependencies are inferred from the claim text.