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US 11,456,374 B2Granted
Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
OwnerMatthew H. Kiminventor
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Abstract
The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.
Claims15
A transistor comprising:
- a GeSiSn base region;
- an emitter region;
- and
- a collector region,
- wherein:
- the transistor is a heterojunction bipolar transistor;
- and
- the GeSiSn base region comprises a Sn content and a Si content to be latticed matched or coherently strained to GaAs.
5 more elements
A transistor comprising:
- a GeSiSn base region;
- an emitter region;
- and
- a collector region,
- wherein:
- the transistor is a heterojunction bipolar transistor;
- and
- the collector comprises GaN and is wafer bonded to the GeSiSn base region.
5 more elements
A transistor comprising:
- a GeSiSn base region;
- an emitter region;
- and
- a collector region,
- wherein:
- the transistor is a heterojunction bipolar transistor;
- and
- the collector comprises SiC and is wafer bonded to the GeSiSn base region.
5 more elements
Dependencies are inferred from the claim text.