Integrated circuit comprising at least one bipolar transistor and a corresponding method of production

An integrated circuit, comprising:

• a doped semiconductor substrate of a first type;
• a buried semiconductor layer of a second type opposite the first type in the doped semiconductor substrate;
• a doped annular well of the second type in contact with the buried semiconductor layer;
• wherein the doped annular well surrounds a doped semiconductor well of the first type;
• an insulating structure extending vertically through the doped semiconductor well to divide the doped semiconductor well to contain a first region of the first type electrically insulated from a second region of the first type;
• a first doped region of the second type located in the first region;
• a second doped region of the second type located in the second region;
• an electrical connection of the first doped region to the second region;
• wherein said integrated circuit is a Darlington type bipolar transistor including a first transistor and second transistor having a common collector formed by the buried semiconductor layer and the doped annular well, a first base of the first transistor formed by the first region, a second base of the second transistor formed by the second region, a first emitter of the first transistor formed by the first doped region and a second emitter of the second transistor formed by the second doped region.