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US 12,666,961 B2Granted
Heater elements
AssigneeGlobalFoundries U.S. Inc.
InventorsUppili S. Raghunathan, Vibhor Jain, Yves T. Ngu, Johnatan A. Kantarovsky, Sebastian T. Ventrone
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heater elements, methods of operation and methods of manufacture. The structure includes: an active device; a heater element under the active device and within a semiconductor substrate; and a contact to the heater element and the active device.
Claims18
A structure comprising:
- an active device;
- a heater element under the active device and within a semiconductor substrate;
- a contact to the active device and providing current to the heater element;
- and
- an airgap below the heater element.
2 more elements
A structure comprising:
- a heterojunction bipolar transistor integrated with a semiconductor substrate;
- a heater element in the semiconductor substrate and which surrounds the heterojunction bipolar transistor;
- a contact to the heterojunction bipolar transistor and which provides a current the heater element;
- a shallow trench isolation structure isolating the heterojunction bipolar transistor from the heater element;
- and
- at least one airgap below the heater element.
3 more elements
A device structure comprising:
- an active device;
- a heater element surrounding the active device, wherein the heater element is under the active device and within a semiconductor substrate;
- an airgap below the heater element;
- a performance sensor configured to detect a change in performance of the active device;
- a heat sensor configured to detect heat generated from the heater element;
- and
- control circuitry configured to activate the heater element when the performance sensor detects performance degradation in the active device.
4 more elements
Dependencies are inferred from the claim text.