Two-channel semiconductor component

A two-channel semiconductor component, comprising:

• a doped semiconductor body formed from a group IV semiconductor material;
• a top-side top-gate electrode;
• a bottom-side bottom-gate electrode,
• a first source electrode with a doped source region of a second conductivity type—that is opposite to a first conductivity type—formed in a silicon body,
• a first drain electrode with a doped first drain region of the second conductivity type formed in the semiconductor body;
• wherein
• a first source region has a greater extent in a depth direction in the silicon body than the first drain region, and divides the silicon body into a first depth section, that extends as far as to a lower edge of the first source region, and a second depth region that extends in a depth direction adjacently to the first depth section as far as to a bottom side of the semiconductor body;
• from a lateral point of view, a first source isolation region is arranged between the first source region and the top-gate electrode, wherein said first source isolation region electrically isolates the first source electrode and the top-gate electrode from each other and extends in a depth direction into the first depth section of the semiconductor body, but not into the second depth section;
• from a lateral point of view, a first drain isolation region is arranged between the first drain region and the top-gate electrode, wherein said first drain isolation region electrically isolates the first drain electrode and the top-gate electrode from each other and extends in a depth direction as far as to a lower edge of a gate isolation layer of the top-gate electrode;
• wherein
• respective depth direction dimensions of the first source region, of the first drain region, of the first source isolation region and of the first drain isolation region are chosen such that
• in a first operating state, in which respective first and second operating voltages are applied to the top-gate electrode and the bottom-gate electrode, a first conductive channel of the second conductivity type, which is separated laterally from the first source region by the first source isolation region, can be formed in the first depth section, and a second conductive channel of the second conductivity type, which is decoupled from the first conductive channel by a barrier region of the semiconductor body extending in a depth direction between the conductive channels, can be formed in the second depth section, and
• in a second operating state, in which third and fourth operating voltages satisfying a resonance condition are applied to the top-gate electrode and the bottom-gate electrode, the first and second conductive channels can be coupled to one another by means of a tunnel effect for minority charge carriers over the barrier region of the semiconductor body.