Semiconductor device including resonant tunneling diode structure having a superlattice

A semiconductor device comprising:

• at least one double-barrier resonant tunneling diode (DBRTD) comprising
• a first doped semiconductor layer;
• a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
• an intrinsic semiconductor layer on the first barrier layer;
• a second barrier layer on the intrinsic semiconductor layer, the second barrier layer comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
• and
• a second doped semiconductor layer on the second barrier layer.

A semiconductor device comprising:

• at least one double-barrier resonant tunneling diode (DBRTD) comprising
• a first doped semiconductor layer;
• a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
• an intrinsic semiconductor layer on the first barrier layer;
• a second barrier layer on the intrinsic semiconductor layer comprising an oxide layer;
• and
• a second doped semiconductor layer on the second barrier layer.

A semiconductor device comprising:

• at least one double-barrier resonant tunneling diode (DBRTD) comprising:
• a first doped semiconductor layer;
• a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• an intrinsic semiconductor layer on the first barrier layer;
• a second barrier layer on the intrinsic semiconductor layer comprising an oxide;
• and
• a second doped semiconductor layer on the second barrier layer.