Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice

A method for making a semiconductor device comprising:

• forming at least one double-barrier resonant tunneling diode (DBRTD) by
• forming a first doped semiconductor layer,
• forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• forming an intrinsic semiconductor layer on the first barrier layer,
• forming a second barrier layer on the intrinsic semiconductor, the second barrier layer comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions and
• forming a second doped semiconductor layer on the second barrier layer.

A method for making a semiconductor device comprising:

• forming at least one double-barrier resonant tunneling diode (DBRTD) by
• forming a first doped semiconductor layer,
• forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• forming an intrinsic semiconductor layer on the first barrier layer,
• forming a second barrier layer on the intrinsic semiconductor layer comprising an oxide layer, and
• forming a second doped semiconductor layer on the second barrier layer.