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AssigneeAtomera Incorporated
InventorsROBERT J. MEARS, HIDEKI TAKEUCHI, MAREK HYTHA
Estimating the term…
A semiconductor device may include at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer and a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one DBRTD may further include an intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the intrinsic semiconductor layer, and a second doped semiconductor layer on the second superlattice layer.
A semiconductor device comprising:
The semiconductor device of 1 wherein the second barrier layer also comprises a superlattice.
The semiconductor device of 3 wherein the second doped semiconductor layer comprises a single crystal semiconductor layer.
The semiconductor device of 1 wherein the second barrier layer comprises an oxide layer.
The semiconductor device of 5 wherein the second doped semiconductor layer comprises a polycrystalline semiconductor layer.
The semiconductor device of 1 wherein the first and second doped semiconductor layers have a same dopant conductivity type.
The semiconductor device of 1 wherein the first and second doped semiconductor layers have opposite dopant conductivity types.
The semiconductor device of 1 wherein the at least one non-semiconductor monolayer comprises oxygen, and wherein each semiconductor monolayer comprises silicon.
A semiconductor device comprising:
A semiconductor device comprising
Dependencies are inferred from the claim text.