Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers

A method for making a semiconductor device comprising:

• forming at least one double-barrier resonant tunneling diode (DBRTD) by
• forming a first doped semiconductor layer,
• forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• forming a first intrinsic semiconductor layer on the first barrier layer,
• forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,
• forming a second intrinsic semiconductor layer on the second barrier layer,
• forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,
• forming a third intrinsic semiconductor layer on the third barrier layer,
• forming a fourth barrier layer on the third intrinsic semiconductor layer, and
• forming a second doped semiconductor layer on the fourth barrier layer, the first and second doped semiconductor layers having the same dopant conductivity type.

A method for making a semiconductor device comprising:

• forming at least one double-barrier resonant tunneling diode (DBRTD) by
• forming a first doped semiconductor layer,
• forming a first barrier layer on the first doped semiconductor layer and comprising a first superlattice, the first superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• forming a first intrinsic semiconductor layer on the first barrier layer,
• forming a second barrier layer on the first intrinsic semiconductor layer and comprising a second superlattice, the second superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• forming a second intrinsic semiconductor layer on the second barrier layer,
• forming a third barrier layer on the second intrinsic semiconductor layer and also comprising the superlattice,
• forming a third barrier layer on the second intrinsic semiconductor layer and comprising a third superlattice, the third superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• forming a fourth barrier layer on the third intrinsic semiconductor layer, and
• forming a second doped semiconductor layer on the fourth barrier layer, the first and second doped semiconductor layers having opposite dopant conductivity types.