Integration of lateral and vertical quantum well transistors in the same epitaxial stack

A method of forming an integrated circuit including a Stark-effect transistor and a resonant tunneling transistor using a single epitaxial stack, comprising the steps of:

• forming a semi-insulating substrate;
• forming a subcollector layer on the semi-insulating substrate having a relatively low band gap between conduction and valence bands;
• forming a collector layer having a relatively high band gap with respect to the subcollector layer to overlie the subcollector layer;
• forming a quantum well layer having a relatively low band gap with respect to the collector layer to overlie the collector layer;
• forming a first injection barrier layer having a relatively high band gap with respect to the collector layer to overlie the quantum well layer;
• forming a quantum injection well layer having a relatively low band gap with respect to the first injection barrier layer to overlie the first injection barrier layer;
• forming a second injection barrier layer having a relatively high band gap with respect to the quantum injection well layer to overlie the quantum injection well layer;
• forming an emitter layer having a relatively low band gap with respect to the second injection barrier layer to overlie the second injection barrier layer;
• the subcollector layer, the collector layer, the quantum well layer, the first injection barrier layer, the quantum well injection layer, the second injection barrier layer and the emitter layer forming an epitaxial stack;
• defining a quantum well resonant tunneling transistor area and a separate Stark-effect transistor area on the stack;
• etching the emitter layer, the second injection barrier layer, the quantum injection well layer and the first injection barrier layer within the resonant tunneling transistor area to expose the quantum well layer;
• forming a base contact within the resonant tunneling transistor area to the quantum well layer;
• forming a collector contact within the resonant tunneling transistor area to the subcollector layer;
• forming a source contact within the Stark-effect transistor area to overlie and to be conductively coupled to the quantum well layer;
• forming a gate contact within the Stark-effect transistor area and spaced from the source contact to overlie and to be conductively coupled to the emitter layer and decoupled from the source contact and a drain contact;
• forming the drain contact within the Stark-effect transistor area and spaced from the gate contact opposite the source contact to overlie and to be conductively coupled to the emitter layer;
• and
• forming a back gate contact within the Stark-effect transistor area to the subcollector area.