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US 7,875,958 B2Granted
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhiyuan Cheng, Calvin Sheen
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Abstract
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Claims19
A structure comprising:
- a non-crystalline material defining an opening having a sidewall disposed above a surface of a substrate, the substrate comprising a first crystalline semiconductor material;
- a second crystalline semiconductor material disposed in the opening, the second crystalline semiconductor material being lattice-mismatched to the first crystalline semiconductor material, and the second crystalline semiconductor material having a height equal to or greater than half a width of the opening, wherein the height is in a direction orthogonal to the surface of the substrate, and the width is in a direction parallel to the surface of the substrate;
- and
- a tunneling device disposed over at least a portion of the second crystalline semiconductor material.
1 more element
Dependencies are inferred from the claim text.