H10D 1/694
Comprising noble metals or noble metal oxides
Official title: {comprising noble metals or noble metal oxides}
H10D1/694 (Comprising noble metals or noble metal oxides) appears on 973 US grants and 1,171 published applications in this corpus.
Search patents in H10D- Granted patents
- 973
- Published applications
- 1,171
- Assignees
- 222
- Inventors
- 1,422
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 10 | 0 |
| 2001 | 14 | 17 |
| 2002 | 16 | 35 |
| 2003 | 40 | 68 |
| 2004 | 61 | 112 |
| 2005 | 68 | 115 |
| 2006 | 82 | 143 |
| 2007 | 71 | 114 |
| 2008 | 63 | 63 |
| 2009 | 60 | 54 |
| 2010 | 50 | 35 |
| 2011 | 42 | 27 |
| 2012 | 33 | 36 |
| 2013 | 41 | 38 |
| 2014 | 45 | 26 |
| 2015 | 27 | 28 |
| 2016 | 19 | 14 |
| 2017 | 12 | 14 |
| 2018 | 12 | 9 |
| 2019 | 14 | 16 |
| 2020 | 13 | 24 |
| 2021 | 14 | 27 |
| 2022 | 31 | 28 |
| 2023 | 35 | 55 |
| 2024 | 41 | 31 |
| 2025 | 37 | 21 |
| 2026 | 15 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitors22 Sep 2026US 12,745,403 B2Intel Corporation
- Ferroelectric nanoparticle capacitor for non-binary logics1 Sep 2026US 12,727,166 B2Terra Quantum AG
- Method of forming a majority gate based low power ferroelectric based adder with reset mechanism30 Jun 2026US 12,671,420 B2Kepler Computing Inc.
- Capacitor and semiconductor device including the capacitor16 Jun 2026US 12,660,214 B2Samsung Electronics Co., Ltd.
- Capacitor devices with strontium titanate insulator layers26 May 2026US 12,641,804 B2Intel Corporation
- Capacitor structure and semiconductor device including the same8 Oct 2026US 2026/0313876 A1Samsung Electronics Co., Ltd.
- Structure and method to provide capacitive junction with contact bars of different depths24 Sep 2026US 2026/0293171 A1Globalfoundries Singapore Pte. Ltd.
- Fluorite-based material thin film and semiconductor device comprising the same27 Aug 2026US 2026/0250147 A1Samsung Electronics Co., Ltd.
- Capacitor devices with strontium titanate insulator layers13 Aug 2026US 2026/0239635 A1Intel Corporation
- Bipolar transistor structure and radio frequency amplifier16 Jul 2026US 2026/0205069 A1Xiamen Sanan Integrated Circuit Co., Ltd.
Most cited
By later US patents
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Method for fabricating a cylinder-type capacitor utilizing a connected ring structure330US 7,910,452 B2Hynix Semiconductor Inc. · 2011
- Making electrical components in handle wafers of integrated circuit packages310US 9,165,793 B1Invensas Corporation · 2015
- Method of growing electrical conductors140US 7,067,407 B2ASM International N.V. · 2006
- Enhanced local interconnects employing ferroelectric electrodes97US 8,247,855 B2Texas Instruments Incorporated · 2012