Enhanced local interconnects employing ferroelectric electrodes
AssigneeTexas Instruments Incorporated
InventorScott R. Summerfelt
Life of this patent
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Abstract
A ferroelectric device employs ferroelectric electrodes as local interconnect(s). One or more circuit features are formed within or on a semiconductor body. A first dielectric layer is formed over the semiconductor body. Lower contacts are formed within the first dielectric layer. A bottom electrode is formed over the first dielectric layer and on the lower contacts. A ferroelectric layer is formed on the bottom electrode. A top electrode is formed on the ferroelectric layer. A second dielectric layer is formed over the first dielectric layer. Upper contacts are formed within the second dielectric layer and in contact with the top electrode. Conductive features are formed on the upper contacts.
Claims19
A device comprising:
- one or more circuit features formed within or on a semiconductor body;
- a first dielectric layer formed over the semiconductor body;
- lower contacts formed within the first dielectric layer;
- a bottom electrode structure formed over the first dielectric layer and on a first portion of the lower contacts, thereby defining a first local interconnect;
- a ferroelectric layer formed on the bottom electrode structure;
- a top electrode structure formed on the ferroelectric layer;
- a second dielectric layer formed over the top electrode structure;
- and
- upper contacts formed within the second dielectric layer, a first portion of the upper contacts formed on the top electrode structure, thereby defining a second local interconnect;
- wherein physically adjacent portions of the bottom electrode structure, the top electrode structure, and a first contact of the first portion of upper contacts are electrically connected.
A method of fabricating a device comprising:
- providing a semiconductor body comprising one or more circuit features;
- forming a first dielectric layer over the semiconductor body;
- forming lower contacts in the first dielectric layer;
- forming a bottom electrode structure over the first dielectric layer and on a first portion of the lower contacts to form a first local interconnect;
- forming a ferroelectric layer on the bottom electrode structure;
- forming a top electrode structure on the ferroelectric layer;
- forming a second dielectric layer over the first dielectric layer and the top electrode structure;
- and
- forming upper contacts in the second dielectric layer, a first portion of the upper contacts formed on the top electrode structure to form a second local interconnect, wherein physically adjacent portions of the bottom electrode structure, the top electrode structure, and a first contact of the first portion of upper contacts are electrically connected.
Dependencies are inferred from the claim text.