H10D 1/047
Of conductor-insulator-semiconductor capacitors
Official title: {of conductor-insulator-semiconductor capacitors, e.g. trench capacitors}
H10D1/047 (Of conductor-insulator-semiconductor capacitors) appears on 1,226 US grants and 1,208 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,226
- Published applications
- 1,208
- Assignees
- 276
- Inventors
- 2,115
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 17 | 0 |
| 1990 | 9 | 0 |
| 1991 | 14 | 0 |
| 1992 | 10 | 0 |
| 1993 | 18 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 8 | 0 |
| 1997 | 5 | 0 |
| 1998 | 10 | 0 |
| 1999 | 19 | 0 |
| 2000 | 29 | 0 |
| 2001 | 33 | 13 |
| 2002 | 41 | 34 |
| 2003 | 45 | 56 |
| 2004 | 63 | 73 |
| 2005 | 46 | 83 |
| 2006 | 61 | 73 |
| 2007 | 35 | 55 |
| 2008 | 38 | 53 |
| 2009 | 37 | 44 |
| 2010 | 43 | 49 |
| 2011 | 40 | 40 |
| 2012 | 47 | 52 |
| 2013 | 39 | 50 |
| 2014 | 62 | 55 |
| 2015 | 54 | 54 |
| 2016 | 55 | 46 |
| 2017 | 52 | 38 |
| 2018 | 42 | 41 |
| 2019 | 37 | 40 |
| 2020 | 41 | 24 |
| 2021 | 25 | 34 |
| 2022 | 16 | 31 |
| 2023 | 34 | 47 |
| 2024 | 28 | 35 |
| 2025 | 28 | 49 |
| 2026 | 20 | 39 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method for fabricating the same6 Oct 2026US 12,757,415 B2United Microelectronics Corp.
- Structural element with improved ferroelectric polarisation switching and reliability and method for producing said structural element22 Sep 2026US 12,745,447 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Structure and method for deep trench capacitor with reduced deformation11 Aug 2026US 12,707,655 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, manufacturing method thereof, and 3D NAND memory4 Aug 2026US 12,701,725 B2Yangtze Memory Technologies Co., Ltd.
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304795 A1United Microelectronics Corp.
- Semiconductor device and method for fabricating the same1 Oct 2026US 2026/0304796 A1United Microelectronics Corp.
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor-based capacitor with vertical and lateral capacitive junctions1 Oct 2026US 2026/0304798 A1Globalfoundries Singapore Pte. Ltd.
Most cited
By later US patents
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Process for manufacturing vertical dynamic random access memories409US 5,106,775 AHitachi, Ltd. · 1992
- Semiconductor device and method of manufacturing the same372US 6,737,716 B1Kabushiki Kaisha Toshiba · 2004
- Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography323US 5,013,680 AMicron Technology, Inc. · 1991