H10D 1/048
Having pn junctions
Official title: {having PN junctions, e.g. hybrid capacitors with MOS control}
H10D1/048 (Having pn junctions) appears on 49 US grants and 48 published applications in this corpus.
Search patents in H10D- Granted patents
- 49
- Published applications
- 48
- Assignees
- 28
- Inventors
- 89
- Latest grant
- 4 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 2 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 1 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 3 |
| 2015 | 2 | 1 |
| 2016 | 2 | 6 |
| 2017 | 6 | 2 |
| 2018 | 6 | 8 |
| 2019 | 5 | 7 |
| 2020 | 10 | 6 |
| 2021 | 2 | 4 |
| 2022 | 3 | 1 |
| 2023 | 1 | 3 |
| 2024 | 4 | 2 |
| 2025 | 2 | 1 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Integrated chip including a device with a reduced surface field region4 Nov 2025US 12,464,738 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contaminant collection on SOI27 May 2025US 12,317,519 B2Texas Instruments Incorporated
- Method of manufacturing capacitor structure3 Dec 2024US 12,159,917 B2United Microelectronics Corp.
- Method for forming an IC including a varactor with reduced surface field region7 May 2024US 11,978,810 B2Taiwan Semiconductor Manufacturing Company.Ltd
- RF MOS varactor9 Apr 2024US 11,955,530 B2Texas Instruments Incorporated
- Electrical device including a capacitor for high-voltage applications and method for manufacturing thereof25 Jun 2026US 2026/0181921 A1Murata Manufacturing Co., Ltd.
- Reduced surface field layer in varactor20 Nov 2025US 2025/0359085 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Reduced surface field layer in varactor25 Jul 2024US 2024/0250188 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Contaminant collection on soi2 May 2024US 2024/0145603 A1Texas Instruments Incorporated
- Varactor device with backside electrical contact28 Dec 2023US 2023/0420578 A1Intel Corporation
Most cited
By later US patents
- Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor39US 6,262,469 B1Advanced Micro Devices, Inc. · 2001
- Method for making a varactor with hyper-abrupt junction region including a superlattice35US 10,868,120 B1Atomera Incorporated · 2020
- Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice23US 10,879,357 B1Atomera Incorporated · 2020
- Semiconductor device provided with on-chip decoupling condenser utilizing CMP dummy patterns9US 6,396,123 B1Mitsubishi Denki Kabushiki Kaisha · 2002
- Wafer bonded MOS decoupling capacitor9US 7,064,043 B1Texas Instruments Incorporated · 2006