Method for making a varactor with hyper-abrupt junction region including a superlattice

A method for making a semiconductor device comprising:

• forming a hyper-abrupt junction region on the substrate and comprising
• a first semiconductor layer having a first conductivity type,
• a superlattice layer on the first semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,
• an intrinsic semiconductor layer on the first superlattice layer, and
• a second semiconductor layer on the intrinsic semiconductor layer and having a second conductivity type different than the first conductivity type,
• the first, second, and intrinsic semiconductor layers and the superlattice layer being parallel to underlying portions of the substrate;
• forming an intermediate semiconductor layer between the substrate and the hyper-abrupt junction region;
• and
• forming a first contact coupled to the hyper-abrupt junction region and a second contact coupled to the substrate to define a varactor, the second contact comprising an implant laterally spaced apart from the hyper-abrupt junction region and extending from a surface of the intermediate semiconductor layer to the substrate.

A method for making a semiconductor device comprising:

• forming a hyper-abrupt junction region carried by the substrate and comprising
• a first semiconductor layer having a first conductivity type,
• a superlattice layer on the first semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions,
• an intrinsic semiconductor layer on the first superlattice layer, and
• a second semiconductor layer on the intrinsic semiconductor layer and having a second conductivity type different than the first conductivity type;
• and
• forming a first contact coupled to the hyper-abrupt junction region and a second contact coupled to the substrate to define a varactor.

A method for making a semiconductor device comprising:

• forming a hyper-abrupt junction region on a substrate and comprising
• a first semiconductor layer having a first conductivity type,
• a superlattice layer on the first semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions,
• an intrinsic semiconductor layer below the superlattice layer, and
• a second semiconductor layer on the superlattice layer and having a second conductivity type different than the first conductivity type;
• and
• forming a first contact coupled to the hyper-abrupt junction region and a second contact coupled to the substrate to define a varactor.