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US 12,745,447 B2Granted
Structural element with improved ferroelectric polarisation switching and reliability and method for producing said structural element
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsDavid Lehninger, Ayse Sünbül, Maximilan Lederer, Konrad Seidel
Life of this patent
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Abstract
A structural element may have a ferroelectric or antiferroelectric layer formed on a substrate. The ferroelectric or antiferroelectric layer is doped with a first dopant and at least one second dopant. The ferroelectric or antiferroelectric layer can be formed of HfO2 or ZrO2 and doped with the first dopant Hf or Zr and with the second dopant Al, Si, La, Y, Gd or Sr.
Claims5
A structural element, comprising:
- a ferroelectric or antiferroelectric layer made of HfO2 formed on a substrate,
- wherein the ferroelectric or antiferroelectric layer is doped with a first dopant comprising the element Zr and at least one second dopant comprising the element Al, wherein
- the dopant concentration of the first dopant is in a range of 40-50 at. % and
- the second dopant is present in a ratio of 1:16-20 to Hf.
1 more element
Dependencies are inferred from the claim text.