Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChang-Yih Chen, Kuo-Hsing Lee, Chun-Hsien Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region, forming a first fin-shaped structure on the MOSCAP region, forming a doped layer on the substrate of the non-MOSCAP region and the first fin-shaped structure on the MOSCAP region, removing the doped layer on the non-MOSCAP region, and then performing an anneal process to drive dopants from the doped layer into the first fin-shaped structure.
Claims7
A method for fabricating a semiconductor device, comprising:
- providing a substrate comprising a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region;
- forming a first fin-shaped structure on the MOSCAP region;
- forming a doped layer on the substrate of the non-MOSCAP region and the first fin-shaped structure on the MOSCAP region;
- removing the doped layer on the non-MOSCAP region;
- and
- performing an anneal process.
Dependencies are inferred from the claim text.