Semiconductor device, manufacturing method thereof, and 3D NAND memory
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLu Zhou, Quan Zhang, Lan Yao
Life of this patent
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Abstract
This disclosure provides a semiconductor device, a method of manufacturing the same, a 3D NAND memory, and a memory system. The semiconductor device includes a substrate having a first trench at a surface thereof, and a first insulating layer formed on the surface of the substrate and inside the first trench. The first insulating layer formed inside the first trench forms a second trench that is embedded in the first trench. The semiconductor device further includes a conducting layer formed on a surface of the first insulating layer away from the substrate and inside the second trench.
Claims18
A semiconductor device, comprising:
- a substrate having a first trench at a surface thereof;
- a first insulating layer formed on the surface of the substrate and inside the first trench, the first insulating layer formed inside the first trench forming a second trench that is embedded in the first trench;
- a second insulating layer formed inside the first trench, wherein the first insulating layer formed inside the first trench is formed on the second insulating layer;
- and
- a conducting layer formed on a surface of the first insulating layer away from the substrate and inside the second trench,
- wherein a thickness of the first insulating layer formed on the second insulating layer is a first thickness, a thickness of the first insulating layer formed on the surface of the substrate is a second thickness, and a sum of the first thickness and a thickness of the second insulating layer is greater than the second thickness.
A semiconductor device, comprising:
- a substrate including a first portion and multiple separate second portions on the first portion along a vertical direction of the semiconductor device;
- a conducting layer formed on the substrate along the vertical direction of the semiconductor device, a part of the conducting layer being formed between two adjacent second portions of the substrate along a horizontal direction of the semiconductor device;
- a first insulating layer formed between the substrate and the conducting layer along the vertical direction of the semiconductor device;
- and
- a second insulating layer formed between a bottom of the first insulating layer and the first portion of the substrate,
- wherein a thickness of the first insulating layer formed on the second insulating layer is a first thickness, a thickness of the first insulating layer formed on a surface of second portions of the substrate is a second thickness, and a sum of the first thickness and a thickness of the second insulating layer is greater than the second thickness.
Dependencies are inferred from the claim text.