H10B 20/34
Source electrode or drain electrode programmed
Official title: {Source electrode or drain electrode programmed}
H10B20/34 (Source electrode or drain electrode programmed) appears on 137 US grants and 139 published applications in this corpus.
Search patents in H10B- Granted patents
- 137
- Published applications
- 139
- Assignees
- 80
- Inventors
- 254
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 3 | 5 |
| 2003 | 5 | 3 |
| 2004 | 5 | 9 |
| 2005 | 7 | 3 |
| 2006 | 3 | 2 |
| 2007 | 2 | 4 |
| 2008 | 1 | 6 |
| 2009 | 1 | 7 |
| 2010 | 7 | 1 |
| 2011 | 6 | 4 |
| 2012 | 6 | 7 |
| 2013 | 7 | 5 |
| 2014 | 6 | 3 |
| 2015 | 4 | 2 |
| 2016 | 5 | 5 |
| 2017 | 3 | 0 |
| 2018 | 5 | 4 |
| 2019 | 7 | 9 |
| 2020 | 5 | 3 |
| 2021 | 4 | 1 |
| 2022 | 2 | 11 |
| 2023 | 6 | 5 |
| 2024 | 4 | 8 |
| 2025 | 9 | 15 |
| 2026 | 4 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Encoded read-only memory and decoder19 May 2026US 12,633,363 B2QUALCOMM Incorporated
- Multi-stack bitcell architecture7 Apr 2026US 12,598,741 B2Arm Limited
- Read-only memory method, layout, and device17 Mar 2026US 12,580,033 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Mask-programmable read only memory with electrically isolated cells30 Sep 2025US 12,432,912 B2SK keyfoundry Inc.
- Integrated circuit with hard-coded ic-specific code, device and method8 Oct 2026US 2026/0313887 A1Sandgrain B.V.
- Memory device operating method8 Oct 2026US 2026/0313888 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices and methods of manufacturing thereof13 Aug 2026US 2026/0237447 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing same23 Jul 2026US 2026/0212897 A1
- Semiconductor structures16 Jul 2026US 2026/0206217 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor read only memory device with selectively present mask layer79US 4,755,864 AKabushiki Kaisha Toshiba · 1988
- ROM cell circuit for FinFET devices38US 8,212,295 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2012
- Metal programmed transistor array32US 5,539,235 AAdvanced Micro Devices, Inc. · 1996
- Mask ROM with light bit line architecture25US 7,715,246 B12010
- Semiconductor memory device and method for generating ROM data pattern24US 7,634,744 B2Panasonic Corporation · 2009