H01S 5/32
Comprising pn junctions
Official title: comprising PN junctions, e.g. hetero- or double- heterostructures (H01S5/34, H01S5/36 take precedence)
H01S5/32 (Comprising pn junctions) appears on 3,986 US grants and 3,469 published applications in this corpus.
Search patents in H01S- Granted patents
- 3,986
- Published applications
- 3,469
- Assignees
- 832
- Inventors
- 5,205
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 6 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 6 | 0 |
| 1981 | 6 | 0 |
| 1982 | 6 | 0 |
| 1983 | 8 | 0 |
| 1984 | 11 | 0 |
| 1985 | 5 | 0 |
| 1986 | 13 | 0 |
| 1987 | 19 | 0 |
| 1988 | 27 | 0 |
| 1989 | 34 | 0 |
| 1990 | 32 | 0 |
| 1991 | 51 | 0 |
| 1992 | 40 | 0 |
| 1993 | 60 | 0 |
| 1994 | 88 | 0 |
| 1995 | 75 | 0 |
| 1996 | 89 | 0 |
| 1997 | 69 | 0 |
| 1998 | 117 | 0 |
| 1999 | 103 | 0 |
| 2000 | 81 | 0 |
| 2001 | 88 | 51 |
| 2002 | 100 | 130 |
| 2003 | 134 | 164 |
| 2004 | 138 | 192 |
| 2005 | 131 | 201 |
| 2006 | 144 | 154 |
| 2007 | 90 | 153 |
| 2008 | 111 | 159 |
| 2009 | 105 | 162 |
| 2010 | 168 | 159 |
| 2011 | 137 | 170 |
| 2012 | 135 | 143 |
| 2013 | 139 | 123 |
| 2014 | 139 | 103 |
| 2015 | 140 | 125 |
| 2016 | 112 | 95 |
| 2017 | 104 | 114 |
| 2018 | 112 | 129 |
| 2019 | 158 | 124 |
| 2020 | 118 | 141 |
| 2021 | 106 | 156 |
| 2022 | 89 | 128 |
| 2023 | 98 | 133 |
| 2024 | 104 | 107 |
| 2025 | 82 | 96 |
| 2026 | 48 | 57 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H01S 5/323In aiiibv compounds2,198
- H01S 5/3211Characterised by special cladding layers1,141
- H01S 5/3202Grown on specifically orientated substrates, or using orientation dependent growth761
- H01S 5/3201Incorporating bulkstrain effects380
- H01S 5/327In aiibvi compounds191
- H01S 5/3223Iv compounds91
- H01S 5/3206Ordering or disordering the natural superlattice in ternary or quaternary materials64
- H01S 5/321Having intermediate bandgap layers48
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Light emitting device25 Aug 2026US 12,719,231 B2Nichia Corporation
- Corrugated buried heterostructure laser and method for fabricating the same25 Aug 2026US 12,719,238 B2National Research Council of Canada
- Lateral grounding structure for frequency noise reduction in laser waveguides8 Oct 2026US 2026/0312362 A1Lumentum Operations LLC
- Red green blue laser module8 Oct 2026US 2026/0312372 A1KYOCERA SLD Laser, Inc.
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Optoelectronic semiconductor component20 Aug 2026US 2026/0246233 A1ams-OSRAM International GmbH
- Vertical cavity light-emitting element20 Aug 2026US 2026/0246236 A1Stanley Electric Co., Ltd.
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well413US 6,046,464 ANorth Carolina State University · 2000