H01S 5/321
Having intermediate bandgap layers
Official title: {having intermediate bandgap layers}
H01S5/321 (Having intermediate bandgap layers) appears on 48 US grants and 28 published applications in this corpus.
Search patents in H01S- Granted patents
- 48
- Published applications
- 28
- Assignees
- 34
- Inventors
- 99
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 3 |
| 2002 | 0 | 0 |
| 2003 | 4 | 4 |
| 2004 | 2 | 4 |
| 2005 | 1 | 3 |
| 2006 | 1 | 0 |
| 2007 | 4 | 2 |
| 2008 | 0 | 1 |
| 2009 | 0 | 1 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 2 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 3 |
| 2015 | 2 | 1 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 2 |
| 2020 | 1 | 0 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 2 | 1 |
| 2025 | 0 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Optoelectronic device comprising a semiconductor layer based on gesn having a single-crystal portion with a direct band structure and an underlying barrier region15 Jun 2023US 2023/0187567 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
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Most cited
By later US patents
- Nitride semiconductor device200US 5,959,307 ANichia Chemical Industries, Ltd. · 1999
- Semiconductor laser using five-element compound semiconductor65US 5,042,043 AKabushiki Kaisha Toshiba · 1991
- Semiconductor laser device25US 5,282,218 AKabushiki Kaisha Toshiba · 1994
- Nitride semiconductor laser24US 6,891,268 B2Sony Corporation · 2005
- Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound16US 5,321,712 AKabushiki Kaisha Toshiba · 1994