Back to results
US 6,891,268 B2Granted
Nitride semiconductor laser
AssigneeSony Corporation
InventorsShigetaka Tomiya, Tomonori Hino
Life of this patent
Estimating the term…
Abstract
The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.
Claims22
A nitride semiconductor laser comprising:
- an active layer;
- a stress concentration suppressing layer disposed directly on the active layer without an intervening layer located between the stress concentration suppressing layer and the active layer;
- and
- a cap layer disposed directly on the stress concentration suppressing layer without an intervening layer located between the cap layer and the stress concentration suppressing layer,
- wherein the stress concentration suppressing layer has, on an active layer side, a composition identical to the active layer, and on a cap layer side, a composition identical to the cap layer, and
- wherein the composition of the stress concentration suppressing layer is graded to the cap layer side from the active layer side.
3 more elements
A manufacturing method of a nitride semiconductor laser, method comprising the steps of:
- growing a stress concentration suppressing layer directly on an active layer without an intervening layer located between the stress concentration suppressing layer and the active layer;
- and
- growing a cap layer directly on the stress concentration suppressing layer without an intervening layer located between the cap layer and the stress concentration suppressing layer,
- wherein the stress concentration suppressing layer has, on an active layer side, a composition identical to the active layer, and on a cap layer side, a composition identical to the cap layer, and
- wherein the composition of the stress concentration suppressing layer is graded to the cap layer side from the active layer side.
2 more elements
Dependencies are inferred from the claim text.