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US 10,540,916 B2Granted
Semiconductor light-emitting device, display unit, and electronic apparatus
AssigneeSony Corporation
InventorsKota Tokuda, Takayuki Kawasumi
Life of this patent
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Abstract
A semiconductor light-emitting device according to an embodiment of the present disclosure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a plurality of well layers. In the plurality of well layers included in the active layer, a band gap inclination angle θ1 of a second well layer located relatively close to the p-type semiconductor layer is smaller than a band gap inclination angle θ2 of a first well layer located relatively close to the n-type semiconductor layer.
Claims15
A semiconductor light-emitting device, comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer;
- and
- an active layer between the n-type semiconductor layer and the p-type semiconductor layer, wherein
- the active layer includes a plurality of well layers,
- a first well layer of the plurality of well layers is closer to the n-type semiconductor layer than a second well layer of the plurality of well layers,
- the second well layer is closer to the p-type semiconductor layer than the first well layer,
- the first well layer and the second well layer satisfy a following expression,
- 1≤θ1<θ2
- where θ1 is a first band gap inclination angle in a thickness direction in the second well layer and θ2 is a second band gap inclination angle in the thickness direction in the first well layer, and
- each of a band gap in the first well layer and a band gap in the second well layer decreases one of continuously or intermittently toward a side of the n-type semiconductor layer.
8 more elements
A display unit, comprising:
- a pixel array section including a plurality of display pixels in a matrix;
- and
- a drive circuit configured to drive the plurality of display pixels, wherein
- each of the plurality of display pixels includes a plurality of sub-pixels,
- each of the plurality of sub-pixels includes a semiconductor light-emitting device, and
- the semiconductor light-emitting device includes:
- an n-type semiconductor layer,
- a p-type semiconductor layer, and
- an active layer between the n-type semiconductor layer and the p-type semiconductor layer,
- wherein
- the active layer includes a plurality of well layers,
- a first well layer of the plurality of well layers is closer to the n-type semiconductor layer than a second well layer of the plurality of well layers,
- the second well layer is closer to the p-type semiconductor layer than the first well layer,
- the first well layer and the second well layer satisfy a following expression,
- 1≤θ1<θ2
- where θ1 is a first band gap inclination angle in a thickness direction in the second well layer and θ2 is a second band gap inclination angle in the thickness direction in the first well layer, and
- each of a band gap in the first well layer and a band gap in the second well layer decreases one of continuously or intermittently toward a side of the n-type semiconductor layer.
14 more elements
An electronic apparatus, comprising:
- a display unit that includes:
- a pixel array section including a plurality of display pixels in a matrix;
- and
- a drive circuit configured to drive the plurality of display pixels, wherein
- each of the plurality of display pixels includes a plurality of sub-pixels,
- each of the plurality of sub-pixels includes a semiconductor light-emitting device, and
- the semiconductor light-emitting device includes:
- an n-type semiconductor layer,
- a p-type semiconductor layer, and
- an active layer between the n-type semiconductor layer and the p-type semiconductor layer, wherein
- the active layer includes a plurality of well layers,
- a first well layer of the plurality of well layers is closer to the n-type semiconductor layer than a second well layer of the plurality of well layers,
- the second well layer is closer to the p-type semiconductor layer than the first well layer,
- the first well layer and the second well layer satisfy a following expression,
- 1≤θ1<θ2
- where θ1 is a first band gap inclination angle in a thickness direction in the second well layer and θ2 is a second band gap inclination angle in the thickness direction in the first well layer, and
- each of a band gap in the first well layer and a band gap in the second well layer decreases one of continuously or intermittently toward a side of the n-type semiconductor layer.
14 more elements
A semiconductor light-emitting device, comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer;
- and
- an active layer between the n-type semiconductor layer and the p-type semiconductor layer, wherein
- the active layer includes a plurality of well layers,
- a first well layer of the plurality of well layers is closer to the n-type semiconductor layer than a second well layer of the plurality of well layers,
- the second well layer is closer to the p-type semiconductor layer than the first well layer,
- the first well layer and the second well layer satisfy a following expression,
- 1≤θ1<θ2
- where θ1 is a first band gap inclination angle in a thickness direction in the second well layer and θ2 is a second band gap inclination angle in the thickness direction in the first well layer,
- a band gap in the first well layer decreases one of continuously or intermittently toward a side of the n-type semiconductor layer, and
- a band gap in the second well layer is even.
9 more elements
A semiconductor light-emitting device, comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer;
- and
- an active layer between the n-type semiconductor layer and the p-type semiconductor layer, wherein
- the active layer includes a plurality of well layers,
- a first well layer of the plurality of well layers is closer to the n-type semiconductor layer than a second well layer of the plurality of well layers,
- the second well layer is closer to the p-type semiconductor layer than the first well layer,
- the first well layer and the second well layer satisfy a following expression,
- 0≤θ1<θ2
- where θ1 is a first band gap inclination angle in a thickness direction in the second well layer and θ2 is a second band gap inclination angle in the thickness direction in the first well layer,
- a band gap in the first well layer increases one of continuously or intermittently toward a side of the n-type semiconductor layer, and
- a band gap in the second well layer is even.
9 more elements
Dependencies are inferred from the claim text.