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US 5,042,043 AGranted
Semiconductor laser using five-element compound semiconductor
AssigneeKabushiki Kaisha Toshiba
InventorsAko Hatano, Toshihide Izumiya, Yasuo Ohba
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Abstract
A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure, or a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layers with a zinc blende type structure a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type, together constituting a double heterojunction.
Claims16
In a semiconductor laser comprising:
- a substrate;
- a first clad layer, of a first conductivity type, formed on said substrate and constituted by a superlattice layer wherein BP layers and Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of said Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure;
- an active layer formed on said first clad layer and constituted by a superlattice layer wherein BP layers and Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked on each of said Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure;
- and
- a second clad layer, of a second conductivity type, formed on said active layer and constituted by a superlattice layer wherein BP layers and Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of said Ga.sub.x Al.sub.l-x N (1.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure.
2 more elements
In a semiconductor laser comprising:
- a substrate;
- a first clad layer, of a first conductivity type, formed on said substrate via a buffer layer and constituted by a superlattice layer wherein BP layers and Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of said Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure;
- an active layer formed on said first clad layer and constituted by a superlattice layer wherein BP layers and Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of said Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure;
- and
- a second clad layer, of a second conductivity type, formed on said active layer and constituted by a superlattice layer wherein BP layers and Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of said Ga.sub.x Al.sub.l-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure.
2 more elements
In a semiconductor laser comprising:
- a substrate;
- a first clad layer, of a first conductivity type, formed on said substrate and consisting of a Ga.sub.x Al.sub.y B.sub.l-x-y N.sub.z P.sub.l-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure;
- an active layer formed on said first clad layer and consisting of a Ga.sub.x Al.sub.y B.sub.l-x-y N.sub.z P.sub.l-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure;
- and
- a second clad layer, of a second conductivity type, formed on said active layer and consisting of a Ga.sub.x Al.sub.y B.sub.l-x-y N.sub.z P.sub.l-z (1.ltoreq.x, y, z.ltoreq.1) mixed crystal layer having a blende type crystal structure.
2 more elements
In a semiconductor laser comprising:
- a substrate;
- a first clad layer, of a first conductivity type, formed on said substrate via a buffer layer and consisting of a Ga.sub.x Al.sub.y B.sub.l-x-y N.sub.z P.sub.l-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure;
- an active layer formed on said first clad layer and consisting of a Ga.sub.x Al.sub.y B.sub.l-x-y N.sub.z P.sub.l-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure;
- and
- a second clad layer, of a second conductivity type formed on said active layer and consisting of a Ga.sub.x Al.sub.y B.sub.l-x-y N.sub.z P.sub.l-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.
2 more elements
Dependencies are inferred from the claim text.