H01S 5/323
In aiiibv compounds
Official title: in AIIIBV compounds, e.g. AlGaAs-laser, {InP-based laser}
H01S5/323 (In aiiibv compounds) appears on 2,198 US grants and 1,883 published applications in this corpus.
Search patents in H01S- Granted patents
- 2,198
- Published applications
- 1,883
- Assignees
- 549
- Inventors
- 3,279
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 4 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 7 | 0 |
| 1984 | 6 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 16 | 0 |
| 1988 | 16 | 0 |
| 1989 | 22 | 0 |
| 1990 | 22 | 0 |
| 1991 | 37 | 0 |
| 1992 | 27 | 0 |
| 1993 | 42 | 0 |
| 1994 | 47 | 0 |
| 1995 | 39 | 0 |
| 1996 | 37 | 0 |
| 1997 | 32 | 0 |
| 1998 | 69 | 0 |
| 1999 | 62 | 0 |
| 2000 | 52 | 0 |
| 2001 | 65 | 34 |
| 2002 | 62 | 90 |
| 2003 | 78 | 102 |
| 2004 | 93 | 118 |
| 2005 | 92 | 125 |
| 2006 | 81 | 88 |
| 2007 | 58 | 78 |
| 2008 | 57 | 78 |
| 2009 | 57 | 83 |
| 2010 | 91 | 80 |
| 2011 | 55 | 56 |
| 2012 | 66 | 56 |
| 2013 | 44 | 45 |
| 2014 | 49 | 42 |
| 2015 | 51 | 55 |
| 2016 | 49 | 55 |
| 2017 | 58 | 67 |
| 2018 | 61 | 73 |
| 2019 | 96 | 75 |
| 2020 | 74 | 88 |
| 2021 | 64 | 81 |
| 2022 | 48 | 72 |
| 2023 | 60 | 79 |
| 2024 | 55 | 69 |
| 2025 | 46 | 66 |
| 2026 | 28 | 28 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Light emitting device25 Aug 2026US 12,719,231 B2Nichia Corporation
- Light emitting device18 Aug 2026US 12,712,331 B2Nichia Corporation
- Airplane configured with a high intensity pulse laser generation system and method11 Aug 2026US 12,706,434 B2Blue Laser Fusion, Inc.
- Optical semiconductor device and method for producing same11 Aug 2026US 12,706,444 B2Mitsubishi Electric Corporation
- Lateral grounding structure for frequency noise reduction in laser waveguides8 Oct 2026US 2026/0312362 A1Lumentum Operations LLC
- Red green blue laser module8 Oct 2026US 2026/0312372 A1KYOCERA SLD Laser, Inc.
- Optoelectronic semiconductor component20 Aug 2026US 2026/0246233 A1ams-OSRAM International GmbH
- Surface emitting laser, method for fabricating surface emitting laser20 Aug 2026US 2026/0246239 A1Sanoh Industrial Co., Ltd.
- Semiconductor laser device and optical apparatus20 Aug 2026US 2026/0246240 A1Ushio Denki Kabushiki Kaisha
Most cited
By later US patents
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well413US 6,046,464 ANorth Carolina State University · 2000
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same351US 5,670,798 ANorth Carolina State University · 1997
- Light-emitting gallium nitride-based compound semiconductor device301US 5,578,839 ANichia Chemical Industries, Ltd. · 1996