Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction

An optoelectronic device, comprising:

• a carrier substrate, comprising:
• a first dielectric layer, which is made of an electrically insulating material, and which forms a top side of the carrier substrate lying in a main plane;
• a laser source, comprising:
• a semiconductor membrane, which rests on the first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane;
• a second dielectric layer, which is made of an electrically insulating material, and which covers the semiconductor membrane;
• electrodes, which rest on the doped lateral segments, and which thus ensure lateral injection of charge carriers into the central segment;
• characterized in that wherein the semiconductor membrane is produced based on crystalline GaAs,
• the central segment comprising GaAs-based quantum dots, and
• the doped lateral segments being produced based on AlxGal-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.