Light-emitting gallium nitride-based compound semiconductor device
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Takashi Mukai, Naruhito Iwasa
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Abstract
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
Claims39
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
- a light-emitting layer having first and second major surfaces and formed of a low-resistivity In.sub.x Ga.sub.1-x N, where 0<x<1 ductor doped with an impurity;
- a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
- and
- a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light emitting layer;
- wherein said compound semiconductor of said light-emitting layer is of the n-type and is doped with a p-type impurity.
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
- a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type In.sub.x Ga.sub.1-x N, where 0<x<1, compound semiconductor doped with at least a p-type impurity;
- a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
- and
- a second clad layer joined to said second major surface and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
- a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type In.sub.x Ga.sub.1-x N, where 0<x<1, compound semiconductor doped with an n-type impurity;
- a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
- and
- a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer.
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
- a light-emitting layer having first and second surfaces and comprising a low-resistivity III-V Group gallium nitride-based compound semiconductor containing indium, gallium and nitrogen and doped with an impurity;
- a first clad layer joined to said first surface of said light-emitting layer and comprising an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
- and
- a second clad layer joined to said second surface of said light-emitting layer and comprising a low-resistivity p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer;
- wherein said light-emitting layer is n-type.
Dependencies are inferred from the claim text.