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US 2026/0246239 A1Published application
Surface emitting laser, method for fabricating surface emitting laser
AssigneeSanoh Industrial Co., Ltd.
InventorSrinivas Gandrothula
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Abstract
An extended vertical cavity surface emitting laser (VCSEL) includes: an epitaxially laterally overgrown semiconductor section, a III-nitride active region between hole injecting III-nitride layer and an electron injecting III-nitride layer; and a nanoporous III nitride layer on the electron injecting III nitride layer side.
Claims18
An extended vertical cavity surface emitting laser (VCSEL), comprising:
- an epitaxially laterally overgrown semiconductor section, configured by a III-nitride active region between a hole injecting III-nitride layer and an electron injecting III-nitride layer;
- and
- a nanoporous III nitride layer on a side of the electron injecting III nitride layer.
A method for fabricating a vertical cavity surface emitting laser (VCSEL), the method comprising:
- forming a III-nitride template on a substrate;
- forming a dielectric mask on the III-nitride template;
- forming UID GaN by epitaxial growth from an open area of the dielectric mask;
- and
- forming a nanoporous GaN DBR on the UID GaN.
2 more elements
Dependencies are inferred from the claim text.